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Preliminary Technical Information
Trench TM Power MOSFET
Common-Gate Pair
IXTL2x180N10T
V DSS =
I D25 =
R DS(on) ≤
100V
2x100A
9m Ω
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Continuous
Transient
100
100
± 20
± 30
V
V
V
V
I D25
I L(RMS)
I DM
I A
E AS
P D
dv/dt
T J
T JM
T stg
T L
T SOLD
F C
Weight
T C = 25 ° C
External Lead Current Limit
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
100
75
450
25
750
150
3
-55 ... +175
175
-55 ... +175
300
260
20..120 /9..27
8
A
A
A
A
mJ
W
V/ns
° C
° C
° C
° C
° C
N/lb.
g
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
175°C Operating Temperature
Avalanche Rated
High Current Handling Capability
Fast Intrinsic Rectifier
Low R DS(on) and Q G
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Automotive
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
- Motor Drives
- DC/DC Conversion
- 42V Power Bus
BV DSS
V GS = 0V, I D = 250 μ A
100
V
- ABS Systems
V GS(th)
I GSS
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
2.5
4.5
± 200
V
nA
DC/DC Converters and Off-Line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching Applications
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
V GS = 10V, I D = 50A, Note 1
T J = 150 ° C
5 μ A
250 μ A
9 m Ω
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Voltage Synchronous Recifier
? 2012 IXYS CORPORATION, All Rights Reserved
DS99752B(05/12)
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